14 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com switche s - spd t - sm t 14 - 1 gaas mmic sot26 spdt switch, dc - 3 ghz general description features functional diagram ro h s- c ompliant product low i nsertion loss: 0.4 db ultra small package: so t 26 i nput i p3: +45 dbm positive c ontrol: 0/+3v @ 3 a i ncluded in the h m c -dk005 designers kits electrical specifcations, t a = +25 c, vctl = 0/+3 to +8 vdc typical applications t he h m c 221a( e ) is ideal for: ? i sm applications ? p c m ci a w ireless c ards ? c ellular applications t he h m c 221a( e ) is a low-cost spd t switch in a 6-lead so t 26 plastic package for use in gen - eral switching applications which require very low insertion loss and very small size. t his device can control signals from d c to 3 g h z and is especially suited for 900 m h z, 1.8 - 2.2 g h z, and 2.4 g h z i sm applications with less than 1 db loss. t he design provides exceptional insertion loss perfor - mance, ideal for flter and receiver switching. rf1 and rf2 are refective shorts when off. t he two control voltages require a minimal amount of d c current and offer compatibility with most c mos & tt l logic fami - lies. see h m c 197a( e ) for same performance in an alternate so t 26 pin-out. parameter frequency min. t yp. max. units i nsertion loss d c - 1.0 g h z d c - 2.0 g h z d c - 2.5 g h z d c - 3.0 g h z 0.4 0.45 0.6 0.8 0.7 0.8 0.9 1.1 db db db db i solation d c - 1.0 g h z d c - 2.0 g h z d c - 2.5 g h z d c - 3.0 g h z 24 24 21 14 28 28 25 18 db db db db return loss d c - 1.0 g h z d c - 2.0 g h z d c - 2.5 g h z d c - 3.0 g h z 20 17 16 11 23 22 20 15 db db db db i nput power for 1 db c ompression (vctl = 0/+5v) 0.5 - 1.0 g h z 0.5 - 3.0 g h z 25 23 30 29 dbm dbm i nput t hird order i ntercept (vctl = 0/+5v) ( t wo-tone i nput power = +7 dbm e ach t one) 0.5 - 1.0 g h z 0.5 - 3.0 g h z 40 38 45 43 dbm dbm switching c haracteristics d c - 3.0 g h z tr i s e , tfall (10/90% rf) ton, toff (50% ct l to 10/90% rf) 3 10 ns ns v01.0210 HMC221A / 221ae
14 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com switche s - spd t - sm t 14 - 2 return loss insertion loss isolation gaas mmic sot26 spdt switch, dc - 3 ghz input 0.1 and 1.0 db compression vs. control voltage input third order intercept point vs. control voltage v01.0210 HMC221A / 221ae -3 -2.5 -2 -1.5 -1 -0.5 0 0 0.5 1 1.5 2 2.5 3 insertion loss (db) frequency (ghz) -50 -40 -30 -20 -10 0 0 0.5 1 1.5 2 2.5 3 return loss (db) frequency (ghz) 44 46 48 50 52 54 2 3 4 5 6 7 8 9 900 mhz 1900 mhz ip3 (dbm) control input (v) 15 20 25 30 35 3 4 5 6 7 8 9 p1db & p0.1db (dbm) control input (v) 1 db at 1900 mhz 1 db at 900 mhz 0.1 db at 1900 mhz 0.1 db at 900 mhz -50 -40 -30 -20 -10 0 0 0.5 1 1.5 2 2.5 3 isolation (db) frequency (ghz) distortion vs. control voltage truth table *control input voltage tolerances are 0.2 vdc. c ontrol i nput t hird order i ntercept (dbm) +7 dbm e ach t one (vdc) 900 m h z 1900 m h z +3 51 48 +5 51 49 +8 51 50 c ontrol i nput* c ontrol c urrent signal path state a (vdc) b (vdc) i a (a) i b (a) rf to rf1 rf to rf2 0 +3 -3 3 on off +3 0 3 -3 off on 0 +5 -5 5 on off +5 0 5 -5 off on 0 +8 -32 32 on off +8 0 32 -32 off on
14 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com switche s - spd t - sm t 14 - 3 compression vs. control voltage c aution: do not operate in 1db compression at power levels above +31 dbm (vctl = +5 vdc) and do not hot switch power levels greater than +20 dbm (vctl = +5vdc). d c blocks are required at ports rf c , rf1 and rf2. c arrier at 900 m h z c arrier at 1900 m h z c ontrol i nput i nput power for 0.1 db c ompression i nput power for 1 db c ompression i nput power for 0.1 db c ompression i nput power for 1.0 db c ompression (vdc) (dbm) (dbm) (dbm) (dbm) +3 21 24 21 24 +5 28 30 27 30 +8 32 34 31 33 gaas mmic sot26 spdt switch, dc - 3 ghz v01.0210 HMC221A / 221ae absolute maximum ratings outline drawing c ontrol voltage range (a & b) -0.2 to +12 vdc storage t emperature -65 to +150 c operating t emperature -40 to +85 c e sd sensitivity ( h bm) c lass 1a e l ect ros t a tic s e ns iti v e de v ice obs e rv e h andl i ng pr ec au ti ons no tes: 1. leadframe ma teri al: coppe r alloy 2. dimensi ons are in inches [millimete rs]. 3. dimension does no t include moldflash of 0.15mm per side. 4. dimension does no t include moldflash of 0.25mm per side. 5. all ground l eads mus t be soldered t o pc b rf ground. package information part number package body material lead finish msl rating package marking h m c 221a low stress i njection molded plastic sn/pb solder msl1 [1] 221a xxxx h m c 221a e ro h s-compliant low stress i njection molded plastic 100% matte sn msl1 [2] 221a e xxxx [1] max peak refow temperature of 235 c [2] max peak refow temperature of 260 c
14 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com switche s - spd t - sm t 14 - 4 gaas mmic sot26 spdt switch, dc - 3 ghz v01.0210 HMC221A / 221ae typical application circuit notes: 1. set logic gate and switch vdd = +3v to +5v and use hct series logic to provide a tt l driver interface. 2. c ontrol inputs a/b can be driven directly with c mos logic ( hc ) with vdd of 5 to 8 volts applied to the c mos logic gates. 3. d c blocking capacitors are required for each rf port as shown. c apacitor value determines lowest frequency of operation. 4. h ighest rf signal power capability is achieved with vdd = +8v and a/b set to 0/+8v. evaluation circuit board t he circuit board used in the application should be generated with proper rf circuit design tech - niques. signal lines at the rf port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. t he evaluation circuit board shown above is avail - able from h ittite microwave c orporation upon request. list of materials for evaluation pcb 101675 [1] i tem description j1 - j3 p c b mount sma rf c onnector j4 - j7 d c pin c 1 - c 3 330 pf c apacitor, 0402 pkg. u1 h m c 221a / h m c 221a e spd t switch p c b [2] 101659 e valuation p c b [1] reference this number when ordering complete evaluation p c b [2] c ircuit board material: rogers 4350
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